A simple approach to the capacitance technique for determination of interface state density of a metal–semiconductor contact

The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

E. H. Nicollian, A. Goetzberger · Bell System Technical Journal · 1967 · 1.8K citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

Engineering, Charge Transport, Semiconductor Device +16

Surface States and Barrier Height of Metal-Semiconductor Systems

A. Cowley, Simon M. Sze · Journal of Applied Physics · 1965 · 1.4K citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Origin of the Excess Capacitance at Intimate Schottky Contacts

J. H. Werner, A. F. J. Levi, R. T. Tung et al. · Physical Review Letters · 1988 · 219 citations

Electrical Engineering, Excess Capacitance, Engineering +14

On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode

Pabitra Chattopadhyay, Adrian Daw · Solid-State Electronics · 1986 · 195 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +6