Japanese Journal of Applied Physics · 1985 · 39 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsQuantum OptoelectronicsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersCurrent DensityDouble Heterostructure DevicesDouble HeterostructuresHeterostructure DevicesHeterostructure LasersHeterostructure OptoelectronicsHydride Vapor Phase EpitaxySemiconductor Laser Fabrication
Room temperature cw laser operation was achieved at a wavelength as short as 671 nm using an InGaAsP/InGaP double heterostructure (DH) laser on GaAs 0.62 P 0.38 substrate for the first time. The DH structure was grown by the hydride vapor phase epitaxial method with a dual-growth-chamber reactor. With a mesa stripe laser structure, the threshold current density J th was as low as 4.5 kA/cm 2 and the characteristic temperature T 0 was 90 K at around room temperature.
6