Japanese Journal of Applied Physics · 1992 · 12 citations · 2 references
Non-volatile MemorySite DependenceEngineeringNuclear PhysicsComputer ArchitectureIon Beam InstrumentationHardware SecurityIon ImplantationIon BeamKbit SramsIon EmissionElectrical EngineeringPhysicsSoft ErrorsComputer EngineeringAtomic PhysicsSingle Event EffectsSingle-ion HittingMicroelectronicsMemory ArchitectureNatural SciencesApplied PhysicsSingle α ParticleSoft ErrorSemiconductor Memory
With the use of a single α particle of 3 MeV from a collimated micron-size ion beam, soft errors have been induced incidentally in 64 kbit SRAMs. Mapping of the soft error sites has revealed that the drain regions of “off”-state transistors are most susceptible to the single-ion hitting.
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