Applied Physics Letters · 1988 · 98 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsSurface ScienceDiffusion In SolidsSemiconductor InterfacesSilicon MaterialsSolid-state DiffusionSurface DiffusionThermal DiffusivityDiffusion In SemiconductorsDiffusion KineticsDiffusion MechanismsDiffusion ProfilesDiffusivityInterdiffusion KineticsMean DiffusivityTemperature Dependence Of Diffusion
Titanium diffusion profiles in silicon were determined in the 950–1200 °C temperature range, with experimental conditions avoiding any oxygen or nitrogen contamination, which could perturb the boundary condition at the TiSi2/Si interface. Thus diffusivity values in the range 5×10−10–10−8 cm2 s−1 are obtained, and are about two orders of magnitude higher than previously reported.
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Eicke R. Weber · Applied Physics A · 1983 · 1.2K citations
Natural Sciences, Materials Engineering, Materials Science +12
Titanium in silicon as a deep level impurity
J.-W. Chen, A. G. Milnes, A. Rohatgi · Solid-State Electronics · 1979 · 70 citations