A study of hydrogen doped semiconductors using the INDO method

References

Page 1

	Year	Citations
Valence-Band Parameters in Cubic Semiconductors P. Lawaetz Physical review. B, Solid state SemiconductorsMaterials ScienceEngineeringSemiempirical ModelPhysics	1971	1.1K
Diatomic-Hydrogen-Complex Diffusion and Self-Trapping in Crystalline Silicon K. J. Chang, D. J. Chadi Physical Review Letters Crystalline SiliconCrystalline SiEngineeringPhysicsHydrogen Transition	1989	194
Photoemission spectroscopy using synchrotron radiation. I. Overviews of valence-band structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and Agl D. E. East̀man, W. D. Grobman, J. L. Freeouf, Physical review. B, Solid state EngineeringPhotoemission DensitiesElectronic State DensitiesChemistryElectronic Excited State	1974	180
Modification of the INDO Calculation Scheme and Parametrization for Ionic Crystals Eugene V. Stefanovich, E. Shidlovskaya, Alexander L. Shluger physica status solidi (b) Materials ScienceInorganic ChemistrySolid-state IonicIonic CrystalsEngineering	1990	179
Hydrogen bonding and diffusion in crystalline silicon K. J. Chang, D. J. Chadi Physical review. B, Condensed matter EngineeringChemistrySilicon On InsulatorMolecular HydrogenSilicene	1989	176
Calculating the density of states and optical-absorption spectra of large quantum systems by the plane-wave moments method Lin‐Wang Wang Physical review. B, Condensed matter Quantum DynamicEngineeringLarge Quantum SystemsMany-body Quantum PhysicMoments Method	1994	131
Spectroscopy and electronic structure of jet-cooled GaAs George W. Lemire, Gregory A. Bishea, Scott A. Heidecke, The Journal of Chemical Physics EngineeringChemistryElectronic Excited StateElectronic StructureSpectroscopic Property	1990	90
Application of molecular models to electronic structure calculations of defects in oxide crystals. I. Parametrization of the modified INDO method Alexander L. Shluger Theoretical Chemistry Accounts Materials ScienceOxide CrystalsEngineeringCrystalline DefectsNatural Sciences	1985	83
Elastic properties of semiconductors studied by extended Hückel theory Michihide Kitamura, Shinji Muramatsu, Walter A. Harrison Physical review. B, Condensed matter SemiconductorsMaterials ScienceTransverse ChargeEngineeringPhysics	1992	79
Reconstruction of the (110) surface of III–V semiconductor compounds C. A. Swarts, T. C. McGill, William A. Goddard Surface Science Materials ScienceSemiconductorsEngineeringSurface AnalysisSurface Science	1981	68

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