W. D. Grobman

Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAs

D. E. East̀man, W. D. Grobman · Physical Review Letters · 1972 · 256 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +13

Photoemission spectroscopy using synchrotron radiation. I. Overviews of valence-band structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and Agl

D. E. East̀man, W. D. Grobman, J. L. Freeouf et al. · Physical review. B, Solid state · 1974 · 180 citations

Engineering, Photoemission Densities, Electronic State Densities +20

Photoemission Valence-Band Densities of States for Si, Ge, and GaAs Using Synchrotron Radiation

W. D. Grobman, D. E. East̀man · Physical Review Letters · 1972 · 155 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +14

Valence Electronic Structure and Charge Transfer in Tetrathiofulvalinium Tetracyanoquinodimethane (TTF-TCNQ) from Photoemission Spectroscopy

W. D. Grobman, R. A. Pollak, D. E. East̀man et al. · Physical Review Letters · 1974 · 154 citations

Charge Excitations, Engineering, Charge Transfer +19

Chemisorption and decomposition reactions of oxygen-containing organic molecules on clean Pd surfaces studied by UV photoemission

H. Lüth, Gary W. Rubloff, W. D. Grobman · Surface Science · 1977 · 110 citations

Chemical Engineering, Clean Pd Surfaces, Engineering +10