Graphical Representation of Grain and Hillock Orientations inAnnealed Al–1%Si Films

Abstract

The grain‐specific texture of Al–1%Si films on oxidized silicon substrates was studied by transmission electron microscopy. Heat treatments at 400℃ and 550℃ gave rise to the sporadic growth of annealing hillocks. Crystal orientations of individual grains and hillocks were determined by means of on‐line interpretation of Kikuchi patterns. Many hillock orientations differ from the sharp 〈111〉 fibre texture of the layer. The hillocks are assumed to start growing in layer regions where grain orientations deviate from the main 〈111〉 fibre texture. Local texture is represented graphically by orientation images using Miller indices, Euler angles, and Rodrigues vectors as orientation parameters.