Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Kenji Nomura, Hiromichi Ohta, Akihiro Takagi et al. · Nature · 2004 · 7.4K citations

Engineering, Electrical Engineering, Materials Science +16

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Kenji Nomura, Hiromichi Ohta, Kazushige Ueda et al. · Science · 2003 · 1.9K citations

Engineering, Electrical Engineering, Materials Science +17

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Hisato Yabuta, Masafumi Sano, Katsumi Abe et al. · Applied Physics Letters · 2006 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

Kenji Nomura, Akihiro Takagi, Toshio Kamiya et al. · Japanese Journal of Applied Physics · 2006 · 751 citations

Natural Sciences, Materials Engineering, Materials Science +17

High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

Min Kyu Kim, Jong Han Jeong, Hun Jung Lee et al. · Applied Physics Letters · 2007 · 456 citations

Engineering, Electrical Engineering, Materials Science +17