Growth of InAs nanocrystals on GaAs(100) by droplet epitaxy

VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

Ricarda Wagner, W. C. Ellis · Applied Physics Letters · 1964 · 6.7K citations

Materials Science, Engineering, Crystal Growth Technology +3

InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure

Marius Grundmann, O. Stier, D. Bimberg · Physical review. B, Condensed matter · 1995 · 1.2K citations

Materials Science, Ii-vi Semiconductor, Engineering +14

Self-organized growth of regular nanometer-scale InAs dots on GaAs

J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 927 citations

Materials Science, Semiconductors, Strained Structures +14

Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained In<i>x</i>Ga1−<i>x</i>As on GaAs(100)

Supratik Guha, A. Madhukar, K. C. Rajkumar · Applied Physics Letters · 1990 · 660 citations

Semiconductors, Engineering, Crystalline Defects +12

Spontaneous Ordering of Arrays of Coherent Strained Islands

V. A. Shchukin, N. N. Ledentsov, P. S. Kop’ev et al. · Physical Review Letters · 1995 · 566 citations

Materials Science, Quantum Science, Total Energy +14