Concepedia

Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy

K. Umeno, Y. Furukawa, Noriyuki Urakami, R. Noma, S. Mitsuyoshi, Akihiro Wakahara, H. Yonezu

Physica E Low-dimensional Systems and Nanostructures · 2009 · 11 citations · 25 references

DOI

Concepts

References

25

Band Anticrossing in GaInNAs Alloys

W. Walukiewicz, Joel W. Ager, E. E. Haller et al. · Physical Review Letters · 1999 · 1.6K citations

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GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

Masahiko Kondow, K. Uomi, Atsuko Niwa et al. · Japanese Journal of Applied Physics · 1996 · 1.4K citations

, , +14

Electronic Structure and Properties of Solids

Jeremy K. Burdett · The Journal of Physical Chemistry · 1996 · 786 citations

, , +17

Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)

V. Bressler-Hill, A. Lorke, Shikha Varma et al. · Physical review. B, Condensed matter · 1994 · 143 citations

, , +17

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Masahiko Kondow, K. Uomi, T. Kitatani et al. · Journal of Crystal Growth · 1996 · 117 citations

, , +14