Semiconductor Science and Technology · 1987 · 14 citations · 6 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSpectroscopyAtomic TransitionsElectronic Band StructureElectronic SpectroscopyOptical Properties Of SemiconductorsWide Band Gap SemiconductorsZeeman EffectBand Gap EnergyEnergy Band GapPhotoluminescencePhotoluminescence SpectroscopySemiconductor Band Gap DeterminationZeeman Effect MeasurementsZeeman SpectroscopyZeeman Transitions
Zeeman spectroscopy measurements on the sharp line structure observed in the absorption and photoluminescence spectrum of GaP:Ti around 0.61 eV are interpreted as 2T2 implies/implied by 2E transitions of Ti3+(d1). A related system of lines at 0.57 eV in GaAs:Ti is similarly interpreted.
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Transition-metal impurities in III-V compounds
B. Clerjaud · Journal of Physics C Solid State Physics · 1985 · 249 citations
Optical and EPR study of the nickel two-electron-trap state in GaP
U. Kaufmann, W. Koschel, J. Schneider et al. · Physical review. B, Condensed matter · 1979 · 55 citations
Natural Sciences, Chemistry, Physics +17
Optical and Electrical Properties of Vanadium‐Doped GaAs
W. Ulrici, K.‐J. Friedland, L. Eaves et al. · physica status solidi (b) · 1985 · 38 citations · Full text
Absorption spectra of Ti-doped GaAs
A. M. Hennel, C.D. Brandt, Yanfei Wu et al. · Physical review. B, Condensed matter · 1986 · 27 citations