A. M. Hennel - Concepedia

Author

A. M. Hennel

Massachusetts Institute of Technology

Also Known As

A M Hennel, A. Hennel, A. M. Hennel, A.M. Hennel, AndrzejM. Hennel

Publications

635

Citations

H-Index

Concepts

All Affiliations

Massachusetts Institute of Technology University of Warsaw Sorbonne Université Institute of Experimental Physics of the Slovak Academy of Sciences Laboratoire de physique des Solides

About

A. M. Hennel is an author at Massachusetts Institute of Technology specializing in engineering, applied physics, and semiconductors.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	17	447
2	Applied Physics	13	17	447
3	Natural Sciences	6	6	117
4	Chemistry	4	4	75
5	Education	1	1	15

A. M. Hennel

Publications

447

Citations

H-Index

Page 1

	Year	Citations
Identification of a vanadium-related level in liquid encapsulated Czochralski-grown GaAs C.D. Brandt, A. M. Hennel, L. M. Pawlowicz, Applied Physics Letters EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsTrap Energy	1985	57
Cr2+(3d4) absorption in GaAs B. Clerjaud, A. M. Hennel, G. Martinez Solid State Communications SemiconductorsIi-vi SemiconductorEngineeringPhysicsApplied Physics	1980	52
New semi-insulating InP: Titanium midgap donors C.D. Brandt, A. M. Hennel, L. M. Pawlowicz, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringTi DopantHigh Temperature Materials	1986	51
Local modes of vibration in proton- and deuteron-implanted InP J. Tatarkiewicz, B. Clerjaud, D. Côté, Applied Physics Letters Materials SciencePhotoluminescenceEngineeringNuclear PhysicsPhysics	1988	37
Optical and electronic properties of vanadium in gallium arsenide A. M. Hennel, C.D. Brandt, K. Y. Ko, Journal of Applied Physics Optical MaterialsEngineeringChemistryElectronic PropertiesElectronic Structure	1987	34
Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP C.D. Brandt, A. M. Hennel, T. Bryśkiewicz, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringSemiconductorsIi-vi Semiconductor	1989	31
Absorption spectra of Ti-doped GaAs A. M. Hennel, C.D. Brandt, Yanfei Wu, Physical review. B, Condensed matter SemiconductorsEngineeringPhysicsCrystalline DefectsOptical Properties	1986	27
Identification of spin, charge states and optical transitions of vanadium impurities in GaAs A Gorger, Bertrand Meyer, J.‐M. Spaeth, Semiconductor Science and Technology EngineeringMagnetic ResonanceElectronic StructureVanadium ImpuritiesSpin State	1988	26
Effect of plastic deformation on electronic properties of GaAs Marek Skowroński, J. Łagowski, M. Milshtein, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringArsenic Antisite AsgaOptical AbsorptionElectronic Properties	1987	24
Identification of the double acceptor state of isolated nickel in gallium arsenide W. Drożdżewicz, A. M. Hennel, Z. R. Wasilewski, Physical review. B, Condensed matter Engineering-Mode CouplingSolid-state ChemistryChemistrySemiconductor Nanostructures	1984	16

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