Metal-insulator semiconductor Schottky-barrier solar cells fabricated on InP

Abstract

High-efficiency Schottky-barrier solar cells with a metal-insulator semiconductor structure have been fabricated on p-type InP. The open-circuit voltage and the energy conversion efficiency can be increased by introducing a thin oxide layer between the metal and the semiconductor. The open-circuit voltage and the energy conversion efficiency are 0.78 V and 14.5% under AM2 conditions.