Concepedia
Journal of Electronic Materials · 1997 · 41 citations · 20 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsInorganic ChemistryElemental ImpuritiesSemiconductor Crystal GrowthArsenic ChemistryGallium Arsenide Crystal Growth
20
Recombination mechanisms in 8–14-μ HgCdTe
M. A. Kinch, Maurice J. Brau, A. Simmons · Journal of Applied Physics · 1973 · 165 citations
Natural Sciences, Materials Engineering, Materials Science +8
Arsenic-doped CdTe epilayers grown by photoassisted molecular beam epitaxy
R. L. Harper, Sung‐Ho Hwang, N. C. Giles et al. · Applied Physics Letters · 1989 · 73 citations
Engineering, Materials Engineering, Materials Science +17
Infinite-melt vertical liquid-phase epitaxy of HgCdTe from Hg solution: Status and prospects
Tse Tung · Journal of Crystal Growth · 1988 · 72 citations
Engineering, Materials Engineering, Materials Science +12
Molecular beam epitaxy of II–VI compounds: CdxHg1−xTe
J. P. Faurie, A. Million · Journal of Crystal Growth · 1981 · 72 citations
Natural Sciences, Materials Engineering, Materials Science +9
Long and middle wavelength infrared photodiodes fabricated with Hg1−<i>x</i> Cd<i>x</i>Te grown by molecular-beam epitaxy
J. M. Arias, S. H. Shin, J. G. Pasko et al. · Journal of Applied Physics · 1989 · 70 citations