Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling

Abstract

Progress in high-frequency transistors is based on reducing electron transit time, either by scaling their lengths or by introducing materials with higher electron mobility. For gate-all-around quantum-wire transistors with lateral dimensions similar or smaller than their length, a careful analysis of the displacement current reveals that a time shorter than the transit time controls their high-frequency performance. Monte Carlo simulations of such transistors with a self-consistent solution of the 3D Poisson equation clearly show an improvement of the intrinsic cut-off frequency when their lateral areas are reduced, without length scaling.