Electronics Letters · 1998 · 47 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsEpitaxial GrowthInfrared Optical MaterialsOptical Properties Of SemiconductorsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsDiffraction PatternsEpitaxial Film GrowthHeterostructure LasersPhotoluminescencePhotoluminescence SpectroscopyTemperature-dependent GrowthType-ii HeterostructuresX-ray Diffraction Analysis
The authors have studied the molecular-beam epitaxial growth of type-II heterostructures for mid-wavelength infrared lasers. Based on their photoluminescence spectra and X-ray diffraction patterns, it is found that the quality of these heterostructures is highly sensitive to the growth temperature and the interfacial bond type.
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Type-II quantum-well lasers for the mid-wavelength infrared
J. R. Meyer, C. A. Hoffman, F. J. Bartoli et al. · Applied Physics Letters · 1995 · 428 citations
Type-II interband quantum cascade laser at 3.8 µm
Chih‐Hsiang Lin, Rui Q. Yang, D. Zhang et al. · Electronics Letters · 1997 · 149 citations
Infrared (4–11 μm) quantum cascade lasers
Federico Capasso, Jérôme Faist, Carlo Sirtori et al. · Solid State Communications · 1997 · 82 citations
Type II mid-infrared quantum well lasers
J. I. Malin, J. R. Meyer, C. L. Felix et al. · Applied Physics Letters · 1996 · 80 citations