Radio-frequency-preionized xenon z-pinch source for extreme ultraviolet lithography

Malcolm W. McGeoch

Applied Optics · 1998 · 56 citations · 5 references

Concepts

TL;DR

Intense amplified spontaneous emission is generated in generally axial directions in a recombining uniform Z pinch. The authors aim to characterize a radio‑frequency preionized xenon z‑pinch source for EUV lithography, optimizing the xenon–helium mix, measuring source size, brightness, stability, and addressing power scaling via repetition rate and operating cost considerations. They analyze the source by optimizing the xenon–helium mixture and measuring its size, brightness, positional and amplitude stability. The source produces highly efficient soft X‑ray beams, notably intense xenon‑band emission at 134 Å, suitable for extreme ultraviolet lithography.

Abstract

Intense amplified spontaneous emission is generated in generally axial directions in a recombining uniform Z pinch. This effect allows the generation of highly efficient soft x-ray beams, including the intense xenon-band emission at 134 Å, of interest for extreme ultraviolet lithography. We discuss the characteristics of this source, including optimization of the xenon–helium mix and measurements of source size, brightness, and positional and amplitude stability. The issues involved in increasing power to the lithography class by an increase in the repetition rate are discussed. The life and operating costs of a lithography source are considered.

References

5