Stimulated emission of GaAs-Al0.6Ga0.4As multiple quantum well structures grown by metalorganic chemical vapor deposition

Abstract

Well correlated stimulated and spontaneous emission peaks corresponding to electronic transitions from the n=1 and 2 subbands of the conduction band to the corresponding states in the valence band of GaAs-Al0.6Ga0.4As multiple quantum well structure grown by metalorganic chemical vapor deposition were observed. No evidence of phonon-assisted transitions was seen in any of our samples.