V. G. Kreismanis

Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine source

J. R. Shealy, V. G. Kreismanis, David K. Wagner et al. · Applied Physics Letters · 1983 · 58 citations

Aluminium Nitride, Engineering, Arsine Source +17

Photoluminescence of GaAs-Al<i>x</i>Ga1−<i>x</i>As multiple quantum well structure under high excitations

Z. Y. Xu, V. G. Kreismanis, C. L. Tang · Applied Physics Letters · 1983 · 49 citations

Semiconductors, Quantum Science, Electrical Engineering +14

Laser-photoinduced etching of semiconductors and metals

R. W. Haynes, G. Metze, V. G. Kreismanis et al. · Applied Physics Letters · 1980 · 43 citations

Transient Grating, Submicron Resolution, Engineering +18

Photoluminescence measurements of Zn-doped Ga1−<i>x</i>Al<i>x</i>As grown by metalorganic chemical vapor deposition

Z. Y. Xu, V. G. Kreismanis, Chun Tang · Journal of Applied Physics · 1983 · 38 citations

Materials Science, Semiconductors, Aluminium Nitride +14

High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor deposition

Lindley T. Specht, W. E. Hoke, S. Oğuz et al. · Applied Physics Letters · 1986 · 23 citations · Full text

Engineering, Al2o3 Substrates, Photo-electrochemical Cell +19