Design and optimization of high voltage LDMOS transistors on 0.18μm SOI CMOS technology

Extension of RESURF principle to dielectrically isolated power devices

Yi-Fan Huang, B. Jayant Baliga · 2002 · 108 citations

Engineering, Electrical Engineering, Materials Science +17

A versatile 700-1200-V IC process for analog and switching applications

A.W. Ludikhuize · IEEE Transactions on Electron Devices · 1991 · 62 citations

Engineering, Electrical Engineering, Microelectronics +9

A 0.25μm CMOS based 70V smart power technology with deep trench for high-voltage isolation

V. Parthasarathy, Ronghua Zhu, V. Khemka et al. · 2003 · 56 citations

Engineering, Electrical Engineering, Low-power Design +15

Switching Characteristics of a Thin Film SOI Power MOSFET

Satoshi Matsumoto, Il-Jung Kim, Tatsuo Sakai et al. · Japanese Journal of Applied Physics · 1995 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Stepped-Drift LDMOSFET: A Novel Drift Region Engineered Device for Advanced Smart Power Technologies

Ronghua Zhu, V. Khemka, A. Bose et al. · 2006 · 23 citations

Engineering, Electrical Engineering, Microelectronics +12