Concepedia

Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon

J. Maserjian, Göran Petersson, C. Svensson

Solid-State Electronics · 1974 · 94 citations · 4 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationOxide SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSilicon MaterialsCapacitanceInterfacial CapacitanceOxide Defect StatesSilicon Electrical PropertiesSurface Current DensityThin Oxide Films

References

4

Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

Frank Stern, W. E. Howard · Physical Review · 1967 · 1.9K citations

Engineering, Materials Engineering, Materials Science +14

Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

F. Stern · Physical Review D · 1967 · 691 citations

Engineering, Materials Engineering, Materials Science +14

Space Charge Calculations for Semiconductors

Ruth Seiwatz, Mino Green · Journal of Applied Physics · 1958 · 210 citations

Natural Sciences, Electrical Engineering, Condensed Matter Physics +16

Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistor

Alfred P. Gnadinger, H.E. Talley · Solid-State Electronics · 1970 · 84 citations

Engineering, Electrical Engineering, Materials Science +17