Physical Review Letters · 2012 · 15 citations · 40 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsPhase TransformationsSemiconductor MaterialsNanoscale MaterialsPhase TransitionsSemiconductor Crystal GrowthSemiconductor NanomaterialsSemiconductor SurfacesSilicon MaterialsNanoscale Phase TransitionsNanostructured SiliconPhase Transitions In NanomaterialsSiliconSilicon Crystal GrowthSilicon NanostructuresSilicon PhysicsStrain Relaxation
SiGe heteroepitaxy on vicinal Si (1 1 10) is studied as a model system for one-dimensional (1D) to three-dimensional growth mode transitions. By in situ scanning tunneling microscopy it is shown that the 1D-3D transition proceeds smoothly from perfectly facetted 1D nanoripples to coarsened superripples, tadpoles, asymmetric domes, and barns without involving coalescence or agglomeration. By extension of the studies to a wide range of SiGe compositions, a 1D-3D growth phase diagram is obtained. Total energy calculations reveal that the observed critical transition volumes are fully consistent with thermodynamic driven strain relaxation.
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Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
Y. W. Mo, D. E. Savage, B. S. Swartzentruber et al. · Physical Review Letters · 1990 · 1.4K citations
Natural Sciences, Materials Engineering, Materials Science +17