Dose-rate effects on radiation-induced bipolar junction transistor gain degradation

Abstract

Analysis of radiation damage in modern NPN bipolar transistors at various dose rates is performed with a recently introduced charge separation method and pisces simulations. The charge separation method is verified with measurements on metal-oxide-semiconductor capacitors. Gain degradation is more pronounced at lower dose rates. The charge separation technique reveals that depletion-region spreading and effective recombination velocity are both greater for devices irradiated at lower dose rates.