Modeling of silicon carbide chemical vapor deposition in a vertical reactor

Condensation of water vapour during supersonic expansion in nozzles

Philip G. Hill · Journal of Fluid Mechanics · 1966 · 423 citations

Engineering, Nucleation Theory, Fluid Mechanics +16

Thermophoretic Deposition of Small Particles in the Modified Chemical Vapor Deposition (MCVD) Process

K. L. Walker, F. T. Geyling, S. R. Nagel · Journal of the American Ceramic Society · 1980 · 110 citations

Engineering, Vacuum Device, Chemistry +20

Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation

Roland Rupp, Yu.N. Makarov, H. Behner et al. · physica status solidi (b) · 1997 · 60 citations

Materials Science, Semiconductors, Electrical Engineering +12

First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

Roland Rupp, P. Lanig, J. Völkl et al. · Journal of Crystal Growth · 1995 · 38 citations

Materials Engineering, Materials Science, Engineering +9

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

A.N. Vorob’ev, A.E. Komissarov, A.S. Segal et al. · Materials Science and Engineering B · 1999 · 13 citations

Gas Phase Nucleation, Engineering, Physics +6