IEEE Electron Device Letters · 1982 · 21 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor MaterialsDielectricsIntegrated Circuit DesignIntegrated Circuit DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor Device MaterialsGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsMicrowave DevicesMicrowave Integrated Circuit DesignMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsSemiconductor Materials For Microwave Devices
The performance of a high-yield tantalum oxide capacitor for use in GaAs monolithic microwave integrated circuits is described. The integral metal-insulator-metal sandwich structure is reactively sputter-deposited at low temperatures, compatible with a photoresist lift-off process, on semi-insulating GaAs substrate. Dielectric constants of 20-25 were achieved in the capacitors fabricated. An initial application of this process as an interstage coupling capacitor for a two-stage preamplifier is given.
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Electron Transport Mechanisms in Thin Insulating Films
Carver Mead · Physical Review · 1962 · 280 citations