The characterization of etched GaAs surface with HCl or H3PO4 solutions

The Si–SiO2 interface: Correlation of atomic structure and electrical properties

Peter Hahn, M. Henzler · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 161 citations

Engineering, Materials Science, Physics +17

Substrate chemical etching prior to molecular-beam epitaxy: An x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4-H2O2-H2O solution

J. Massies, J. P. Contour · Journal of Applied Physics · 1985 · 136 citations

Natural Sciences, Materials Engineering, Materials Science +17

Etching of III-V semiconductors-an electrochemical approach

III-Vs Review · 1991 · 113 citations

Engineering, Materials Engineering, Materials Science +12

Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements

W. E. Spicer, P. Pianetta, I. Lindau et al. · Journal of Vacuum Science and Technology · 1977 · 94 citations

Natural Sciences, Materials Science, Physics +17

A New Etching Solution System,  H 3 PO 4 ‐  H 2 O 2 ‐  H 2 O  , for GaAs and Its Kinetics

Yoshifumi Mori, N. Watanabe · Journal of The Electrochemical Society · 1978 · 82 citations

Engineering, Materials Engineering, Materials Science +17