Japanese Journal of Applied Physics · 2004 · 13 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsOptoelectronic DevicesPhotodetectorsQuantum DotsSemiconductor Device MaterialsSemiconductor PhysicsCurrent DensityDark CurrentDoping BehaviorHigh-temperature Device OperationQuantum Dot DevicesQuantum Dot PhotodetectorsSemiconductor Infrared MaterialsSemiconductor Quantum Dots
We study the influence of doping density and the resulting optimum operation voltage on the performance of quantum dot infrared photodetectors (QDIPs). The optimum operation voltage, where detectivity becomes maximum, becomes smaller as the doping density increases. This is because the optimum dark current levels are similar regardless of the doping density. We confirmed experimentally that the optimum dark current level is ∼5 mA (current density: ∼A/cm 2 ) for our samples. It is found that the higher doping density improves the performance in the range used in this experiment (5×10 16 –5×10 17 /cm 3 ). The response to a normal incident light is confirmed and the possibility of high-temperature operation of QDIP is shown.
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Characteristics of InGaAs quantum dot infrared photodetectors
Shijie Xu, S. J. Chua, Ting Mei et al. · Applied Physics Letters · 1998 · 166 citations · Full text