Characteristics of InGaAs quantum dot infrared photodetectors

Shijie Xu, S. J. Chua, Ting Mei, X. C. Wang, X. H. Zhang, Gamani Karunasiri, W. J. Fan, C. H. Wang, Ji-an Jiang, S. Wang,

Applied Physics Letters · 1998 · 166 citations · 12 references

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Abstract

A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength.

References

12