B. Kochman

Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors

B. Kochman, Adrienne D. Stiff‐Roberts, Subhananda Chakrabarti et al. · IEEE Journal of Quantum Electronics · 2003 · 150 citations

Quantum Science, Electrical Engineering, Photonics +14

Characteristics of a photonic bandgap single defect microcavity electroluminescent device

Wei Dong Zhou, Jayshri Sabarinathan, P. Bhattacharya et al. · IEEE Journal of Quantum Electronics · 2001 · 76 citations

Photonics, Electrical Engineering, Room Temperature +11

Electrically injected single-defect photonic bandgapsurface-emitting laserat room temperature

Weidong Zhou, Jayshri Sabarinathan, B. Kochman et al. · Electronics Letters · 2000 · 43 citations

Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors

Adrienne D. Stiff‐Roberts, Subhananda Chakrabarti, S. Sandeep Pradhan et al. · Applied Physics Letters · 2002 · 38 citations · Full text

Engineering, Optical Testing, Optoelectronic Devices +17

Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy

Siddhartha Sankar Ghosh, B. Kochman, J. Singh et al. · Applied Physics Letters · 2000 · 37 citations · Full text

Categoryquantum Electronics, Engineering, Ternary Layer +18