A model for the origin of the oscillatory structure in the reverse bias J(V) characteristics of n⁺GaAs/(AlGa)As/n^-GaAs/n⁺GaAs tunnelling devices

Abstract

The oscillatory structure in the low-temperature reverse bias characteristics of n+GaAs/(AlGa)As/n-GaAs/n+GaAs tunnelling devices is explained in terms of the modulation of the resistivity of the undepleted region of the n- layer above the substrate by means of energy relaxation of hot electrons arriving from the high-field depletion layer beyond the barrier.