Publication | Closed Access
Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
29
Citations
37
References
2010
Year
Wide-bandgap SemiconductorInaln Epitaxial LayersEpitaxial GrowthEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsAluminum Gallium NitrideGan Power DeviceCompositional HomogeneityCategoryiii-v Semiconductor
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