Francisco M. Morales

Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers

V. Lebedev, V. Cimalla, Tommy Baumann et al. · Journal of Applied Physics · 2006 · 83 citations

Engineering, Semiconductors, Layer Thickness +17

Determination of the composition of InxGa1−xN from strain measurements

Francisco M. Morales, D. González, J. G. Lozano et al. · Acta Materialia · 2009 · 69 citations

Materials Science, Engineering, Mechanical Properties +6

Model for the thickness dependence of electron concentration in InN films

V. Cimalla, V. Lebedev, Francisco M. Morales et al. · Applied Physics Letters · 2006 · 59 citations

Materials Science, Epitaxial Growth, Thickness Dependence +15

Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network

V. Lebedev, V. Cimalla, J. Pezoldt et al. · Journal of Applied Physics · 2006 · 52 citations

Elastic Strain Relaxations, Engineering, Severe Plastic Deformation +19

Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

Pavel Aseev, Paul E. D. Soto Rodriguez, Víctor J. Gómez et al. · Applied Physics Letters · 2015 · 50 citations

Optical Materials, Engineering, Optoelectronic Devices +20