Study on the temperature effect, hysteresis and drift of pH-ISFET devices based on amorphous tungsten oxide

Methods of isfet fabrication

Tadayuki Matsuo, M. Esashi · Sensors and Actuators · 1981 · 342 citations

Electrical Engineering, Engineering, Microfabrication +4

Comparison of the hysteresis of Ta2O5 and Si3N4 pH-sensing insulators

Luc Bousse, Shahriar Mostarshed, B. van der Schoot et al. · Sensors and Actuators B Chemical · 1994 · 180 citations

Materials Science, Electrical Engineering, Engineering +6

Hysteresis in Al2O3-gate ISFETs

Luc Bousse, H.H. van den Vlekkert, Ν. F. de Rooij · Sensors and Actuators B Chemical · 1990 · 175 citations · Full text

Electrical Engineering, Engineering, Nanoelectronics +5

Time-dependence of the chemical response of silicon nitride surfaces

Luc Bousse, Dean G. Hafeman, Nancy Tran · Sensors and Actuators B Chemical · 1990 · 82 citations

Surface Characterization, Engineering, Surface Science +3

Slow pH response effects of silicon nitride ISFET sensors

Peter Woias, Leonhard Meixner, P. Fröstl · Sensors and Actuators B Chemical · 1998 · 50 citations

Electrical Engineering, Engineering, Sensors +5