Applied Physics Letters · 2004 · 114 citations · 19 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsNanoelectronicsQuantum DotsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsAnnealingAnnealing ProcessesCrystallizationCrystallization BehaviorIn Situ AnnealingPhotoluminescencePhotoluminescence SpectroscopySemiconductor Quantum Dots
By using the droplet epitaxy method, we succeed in fabricating the InAs quantum dots (QDs) with the spatial density of 4×1010∕cm2 and an average lateral size of 20nm on GaAs (001) at the droplets deposition temperature of 50°C and subsequent annealing process under As4 flux. These QDs shows the intense photoluminescence even at room temperature indicating that high-quality InAs QDs can be fabricated by near room temperature droplets deposition and crystallization process by 400°C in situ annealing.
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Electrically Driven Single-Photon Source
Zhiliang Yuan, Beata Kardynał, R. M. Stevenson et al. · Science · 2002 · 1.2K citations · Full text
Self-organized growth of regular nanometer-scale InAs dots on GaAs
J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 928 citations