Electrically Driven Single-Photon Source

TLDR

The device emits single photons by applying subnanosecond voltage pulses to a quantum dot in a p‑i‑n junction. Electroluminescence from a single quantum dot in a p‑i‑n junction produces a single‑photon source, exhibiting exciton and biexciton lines at different currents, anti‑bunching behavior, and indicating that semiconductor technology can mass‑produce such devices for quantum information applications.

Abstract

Electroluminescence from a single quantum dot within the intrinsic region of a p-i-n junction is shown to act as an electrically driven single-photon source. At low injection currents, the dot electroluminescence spectrum reveals a single sharp line due to exciton recombination, while another line due to the biexciton emerges at higher currents. The second-order correlation function of the diode displays anti-bunching under a continuous drive current. Single-photon emission is stimulated by subnanosecond voltage pulses. These results suggest that semiconductor technology can be used to mass-produce a single-photon source for applications in quantum information technology.