Boron diffusion from a reactively sputtered glass source in Si and SiO2

G. D. Bagratishvili, R. B. Dzhanelidze, David Jishiashvili, L. V. Piskanovskii, Z. Shiolashvili

physica status solidi (a) · 1979 · 17 citations · 10 references

Concepts

Abstract

The reactive plasma sputtering technique is used to obtain a boron diffusion source in the form of borosilicate glass (BSG). Physlcal and chemical properties of the BSG films are investigated. Diffusion parameters of B in Si and SiO, are obtaincd in the temperature range between 950 and 1200 °C.

References

10