R. B. Dzhanelidze

MIS structure GaAs–Ge3N4–Al

G. D. Bagratishvili, R. B. Dzhanelidze, N.I. Kurdiani et al. · physica status solidi (a) · 1976 · 29 citations

Engineering, Materials Engineering, Materials Science +16

Mechanism of charge flow through the MGe3N4GaAs structure

G. D. Bagratishvili, R. B. Dzhanelidze, David Jishiashvili et al. · physica status solidi (a) · 1981 · 18 citations

Engineering, Electrical Engineering, Materials Science +15

Boron diffusion from a reactively sputtered glass source in Si and SiO2

G. D. Bagratishvili, R. B. Dzhanelidze, David Jishiashvili et al. · physica status solidi (a) · 1979 · 17 citations

Natural Sciences, Materials Engineering, Materials Science +11

GaAs/Ge3N4/Al structures and mis field-effect transistors based on them

G. D. Bagratishvili, R. B. Dzhanelidze, N.I. Kurdiani et al. · Thin Solid Films · 1979 · 11 citations

Engineering, Electrical Engineering, Materials Science +13