Mechanism of charge flow through the MGe3N4GaAs structure

Abstract

Current-voltage (I–U) curves of the AlGe3N4GaAs strueture are studied depending on the heat treatment conditions. The mechanism of the charge flow through the metal-insulator-semiconductor (MIS) structure is revealed. The contact system parameters (barrier height, contact gap width and its transparency) are determined as well as the energy spectrum of the local states in Ge3N4 which restrict monopolar injection current. [Russian Text Ignored].