Publication | Closed Access
Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys
29
Citations
10
References
2003
Year
Materials ScienceIi-vi SemiconductorPhotoluminescenceX-ray SpectroscopyEngineeringCrystalline DefectsX-ray DiffractionApplied PhysicsCondensed Matter PhysicsIn‐rich InganHexagonal InnRaman MeasurementsSolid-state ChemistryRaman StudyInn SamplesLuminescence PropertyOptoelectronicsCompound Semiconductor
Abstract We present results of a detailed study of X‐ray, photoluminescence, and Raman measurements of hexagonal InN, In‐rich In x Ga 1− x N (0.36 < x < 1) alloys, and InN samples annealed in oxygen. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
| Year | Citations | |
|---|---|---|
Page 1
Page 1