Low-frequency noise in AlGaN/GaN MOS-HFETs

Abstract

A comparative study is presented of low-frequency noise in GaN-based metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) and HFETs. The Hooge parameter at zero gate bias was of the order of 10-3 for both types of device. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases.