Electron mobility in <i>p</i>-GaAs by time of flight

Abstract

The minority-carrier mobility of electrons in metalorganic chemical vapor deposition grown p-GaAs has been measured by a diffusion time-of-flight technique. Doping levels of 1×1017 and 2×1018 cm−3 were investigated. The measured mobilities were about 2900 and 1300 cm2/V s, respectively. The minority-carrier mobilities are lower than the expected majority-carrier mobilities at the same doping levels. The lower mobility is caused by heavy-hole scattering.