High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

Abstract

Self-aligned source/drain (S/D) graphene field-effect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication process without sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, the gate leakage current of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> -10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> A and the contact resistance of 412 Ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LG</i> = 3 μm), which demonstrates the promising future of this self-aligned GFET.