Japanese Journal of Applied Physics · 2007 · 26 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesLight SourcesLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesSemiconductor Device MaterialsWide Band Gap SemiconductorsCarrier Material QualityLight-emitting DevicesLight-emitting Diode MaterialsPhonon Self-energyPower OutputPower Output OptimizationPulse Operation EngineeringUltraviolet Light-emitting Diodes
We report on AlGaN-based ultraviolet light emitting diodes with emission at the wavelengths as short as 247 nm. Migration-enhanced metal organic chemical vapor deposition technique allowed us to improve the material quality. The phonon energy gap engineering approach was used to optimize these UV sources and achieve continuous-wave regime at turn-on voltages lower than 8 V at 20 mA current. Power levels of 0.3 mW were achieved for the packaged devices driven at 90 mA DC current. In the pulse operation 9 mW output power was measured at 1.4 A current. The peak to noise emission ratio was close to 400 at cw current in excess of 20 mA.
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250 nm AlGaN light-emitting diodes
V. Adivarahan, Wenhong Sun, A. Chitnis et al. · Applied Physics Letters · 2004 · 196 citations