Applied Physics Letters · 1980 · 13 citations · 13 references
Optical MaterialsEngineeringChemistrySilicon On InsulatorLuminescence PropertySemiconductorsExciton TransferPhosphorescence ImagingOptical PropertiesPhotoluminescencePhysicsIntrinsic ImpuritySemiconductor MaterialRelative Impurity ConcentrationsLow ConcentrationsNatural SciencesSpectroscopyApplied PhysicsCase StudyB PhotoluminescenceOptoelectronics
We report on a systematic study of the use of photoluminescence for the determination of relative impurity concentrations. The system chosen for the study was Si with a shallow level, B, in the presence of a deeper level, In. The results show that, at sufficiently low concentrations, the photoluminescence intensities can be used to determine the relative impurity concentrations. At higher In concentrations (NIn ≳1015 cm−3) we find that exciton transfer from B to In results in a quenching of the B photoluminescence intensity. For NIn ≳2×1016 cm−3, B photoluminescence was not observed in any sample studied.
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Exciton Energy Transfer in GaP: N
P. J. Wiesner, R. A. Street, H. D. Wolf · Physical Review Letters · 1975 · 112 citations
Localized Excited State, Engineering, Tunneling Microscopy +12
Observation of long lifetime lines in photoluminescence from Si: In
G. S. Mitchard, S. A. Lyon, K. Elliott et al. · Solid State Communications · 1979 · 65 citations