K. Kosai

Electrical and optical properties of infrared photodiodes using the InAs/Ga1−<i>x</i>In<i>x</i>Sb superlattice in heterojunctions with GaSb

J. L. Johnson, Lorene Samoska, A. C. Gossard et al. · Journal of Applied Physics · 1996 · 171 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +21

New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in Si

K. Kosai, M. Gershenzon · Physical review. B, Solid state · 1974 · 104 citations

Engineering, Related Impurity, Chemistry +19

Shallow acceptors and <i>p</i>-type ZnSe

K. Kosai, Brian Fitzpatrick, H. G. Grimmeiss et al. · Applied Physics Letters · 1979 · 79 citations

Ii-vi Semiconductor, Shallow Acceptors, Engineering +11

HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

E. P. Smith, L. T. Pham, G. M. Venzor et al. · Journal of Electronic Materials · 2004 · 74 citations

Photonics, Engineering, Infrared Sensor +8

Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors

R. Rajavel, D. M. Jamba, J. Eric Jensen et al. · Journal of Electronic Materials · 1998 · 62 citations

Ii-vi Semiconductor, Photoluminescence, Engineering +6