Japanese Journal of Applied Physics · 1989 · 32 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceCeramicsSurface EngineeringSurface ScienceEtching ProcessesLaser Material ProcessingLaser Surface ProcessingOptical CeramicsSurface ModificationSurface PhysicsChemical EtchingEtchingLaser Beam FocusingLaser Surface EtchingLaser-induced EffectsMechanical PolishingWet Chemical EtchingWet Etching
Single-crystalline ferrite was masklessly etched by focused Ar + laser irradiation in CCl 4 gas and in H 3 PO 4 solution. Etching rates up to 68 µm/s in CCl 4 and 340 µm/s in H 3 PO 4 have been achieved by laser processes. Bending of the etched narrow groove was observed in CCl 4 gas due to the enhanced reflection caused by the polarization of the laser beam when focused by a microscope objective lens. A vertical slab structure with a high aspect ratio of up to 40 has been obtained by the light-guiding effect of the laser beam in wet-chemical etching. RBS analysis of the processed surface revealed that laser-induced damage was much lower than that induced by mechanical polishing.
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Excimer-laser-induced etching of ceramic PbTi1−<i>x</i>Zr<i>x</i>O3
M. Eyett, D. Bäuerle, W. Wersing et al. · Journal of Applied Physics · 1987 · 58 citations
Laser-induced chemical etching of ceramic PbTi1?xZrxO3
M. Eyett, D. B�uerle, W. Wersing et al. · Applied Physics A · 1986 · 25 citations
Natural Sciences, Materials Engineering, Materials Science +14
CW CO2-laser annealing of arsenic implanted silicon
M. Takai, Pei-Hsin Tsien, S. C. Tsou et al. · Applied Physics A · 1980 · 24 citations