The vapour phase growth of GaxIn1−xP epitaxial layers

Kinetics of transport and epitaxial growth of GaAs with a Ga-AsCl3 system

Don W. Shaw · Journal of Crystal Growth · 1971 · 67 citations

Ga-ascl3 System, Engineering, Physics +5

The preparation of high purity epitaxial InP

R.C. Clarke, B.D. Joyce, W. H. E. Wilgoss · Solid State Communications · 1970 · 57 citations

Materials Science, Materials Engineering, Engineering +3

STIMULATED EMISSION IN In1 -<i>x</i>Ga<i>x</i>P

R. D. Burnham, N. Holonyak, D. L. Keune et al. · Applied Physics Letters · 1970 · 36 citations

Materials Science, Optical Pumping, Localized Excited State +15

Calculation of the In/Ga/P ternary phase diagram and its relation to liquid phase epitaxy

A.W. Mabbitt · Journal of Materials Science · 1970 · 30 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +9

Determining the composition of InP-GaP alloys using Vegard's Law

R. J. Heritage, P Porteous, Brendan J. H. Sheppard · Journal of Materials Science · 1970 · 16 citations

Materials Engineering, Materials Science, Engineering +5