Concepedia
Solid State Communications · 1970 · 57 citations · 7 references
Materials ScienceMaterials EngineeringEngineeringApplied PhysicsMolecular Beam EpitaxyEpitaxial Growth
7
Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide
R. N. Hall, Joshua Racette · Journal of Applied Physics · 1964 · 617 citations
Intrinsic Germanium, Engineering, Interstitial Copper +17
Compound Semiconductors
A. A. SHEPHERD · Nature · 1963 · 178 citations · Full text
The preparation of high purity gallium arsenide by vapour phase epitaxial growth
J.R. Knight, D. Effer, P. R. Evans · Solid-State Electronics · 1965 · 146 citations
Materials Science, Materials Engineering, Engineering +6
Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystals
J.B. Mullin, B.W. Straughan, W.S. Brickell · Journal of Physics and Chemistry of Solids · 1965 · 125 citations
Materials Science, Gaas Crystals, Engineering +7
The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and Phosphine
J. J. Tietjen, H. Paul Maruska, Roger Clough · Journal of The Electrochemical Society · 1969 · 48 citations
Semiconductors, Materials Science, Epitaxial Growth +12