Applied Physics Letters · 1988 · 74 citations · 14 references
Natural SciencesMaterials SciencePhysicsOpticsOptoelectronicsSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsOptical SpectroscopyOptoelectronic MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsMetalorganic Chemical Vapor DepositionMolecular Beam ExperimentsMolecular Beam SpectroscopyReflectanceSemiconductor Band Gap DeterminationSemiconductor CharacterizationSemiconductor Electro-optic EffectsTemperature Effects On Electronic Spectra
We report a modulation spectroscopy experiment on GaAs and Ga0.82Al0.18As at elevated temperatures. Using the contactless electromodulation method of photoreflectance, the direct gaps (E0) of these materials have been observed from 77 K to 600 °C. The latter temperature is comparable to molecular beam expitaxy, metalorganic chemical vapor deposition, growth temperatures, etc. Our results are at the highest temperature yet reported for E0 (GaAs) in a reflectance experiment and the first observation of E0 (Ga1−xAlxAs) at elevated temperatures. From the latter, the Varshni coefficients [Physica 34, 149 (1967)] for Ga0.82Al0.18As were determined.
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Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations