Ideal MOS Curves for Silicon

Abstract

Ideal curves of MOS capacity and surface potential are computed for silicon with oxide thickness and doping as a parameter. High-frequency and low-frequency capacity curves are presented for the doping ranges between 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> and 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup> and SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thickness between 100 and 12000 Å. Additional curves give flatband capacitance, minimum capacitance and voltage of the minimum capacitance in the same ranges. <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">∗</sup>